Methods of forming and using fuses

ABSTRACT

Some embodiments include a fuse having a tungsten-containing structure directly contacting an electrically conductive structure. The electrically conductive structure may be a titanium-containing structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through the interface exceeds a predetermined level. Some embodiments include a method of forming and using a fuse. The fuse is formed to have a tungsten-containing structure directly contacting an electrically conductive structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through the interface exceeds a predetermined level. Current exceeding the predetermined level is passed through the interface to rupture the interface.

RELATED PATENT DATA

This patent resulted from a divisional of U.S. patent application Ser. No. 14/629,296, which was filed Feb. 23, 2015, which issued as U.S. Pat. No. 9,514,905 and which is hereby incorporated herein by reference; which resulted from a divisional of U.S. patent application Ser. No. 13/276,523, which was filed Oct. 19, 2011, which issued as U.S. Pat. No. 8,994,489, and which is hereby incorporated herein by reference.

TECHNICAL FIELD

Fuses, and methods of forming and using fuses.

BACKGROUND

Some types of integrated circuitry utilize fuses. A fuse is a structure which can be broken down or blown in response to a predetermined current flow to interrupt a circuit.

A continuing goal of integrated circuit fabrication is to reduce process steps. Thus, it would be desirable to develop integrated circuit fuses which can be readily incorporated into existing fabrication processes without introduction of numerous new steps and materials. Some integrated circuit constructions may comprise memory arrays, such as arrays of phase change random access memory (PCRAM). It would be desirable to develop fuse architectures which can be readily incorporated into existing fabrication process utilized for producing PCRAM.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 diagrammatically illustrates an example embodiment fuse (in diagrammatic cross-sectional view) at two different operational states.

FIGS. 2 and 3 are a top view and a diagrammatic cross-sectional view of an example embodiment fuse. FIG. 3 is along the line 3-3 of FIG. 2, and FIG. 2 is from the orientation shown along the line 2-2 in FIG. 3.

FIGS. 4 and 5 are a top view and a diagrammatic cross-sectional view of an example embodiment fuse. FIG. 5 is along the line 5-5 of FIG. 4, and FIG. 4 is from the orientation shown along the line 4-4 in FIG. 5.

FIGS. 6-8 are a top view and a pair of diagrammatic cross-sectional views of an example embodiment fuse. FIG. 7 is along the lines 7-7 of FIGS. 6 and 8, FIG. 8 is along the lines 8-8 of FIGS. 6 and 7, and FIG. 6 is from the orientation shown along the lines 6-6 in FIGS. 7 and 8.

FIG. 9 diagrammatically illustrates a plan view of a semiconductor construction comprising a fuse region and a memory array region.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In some embodiments, the invention includes fuses formed by providing an electrically conductive structure directly against a tungsten-containing structure. In some embodiments, the electrically conductive structure may be a titanium-containing structure. An interface where the electrically conductive structure joins the tungsten-containing structure is configured to rupture when current through such interface exceeds a predetermined level.

Some embodiments include fuses that may be readily incorporated into existing integrated circuit fabrication. The fuses utilize materials which are already commonly utilized in integrated circuits. For instance, the fuses having titanium-containing structures and tungsten-containing structures may be readily incorporated into existing PCRAM fabrication processes. Specifically, PCRAM already commonly utilizes titanium-containing structures as heaters within memory cells, and already commonly utilizes tungsten-containing structures as conductive interconnects between circuit components.

Example embodiments are described with reference to FIGS. 1-9.

Referring to FIG. 1, a fuse construction 10 is shown in two different operational modes “A” and “B.”

The fuse construction comprises an electrically conductive structure 12 over a tungsten-containing structure 14.

The electrically conductive structure 12 may comprise any suitable electrically conductive composition, and in some embodiments may be a titanium-containing structure. The structure 12 comprises a material 16. Such material may be of any suitable composition; and in some embodiments may comprise, consist essentially of, or consist of a mixture of titanium and nitrogen. For instance, the material 16 may comprise, consist essentially of, or consist of titanium nitride; either alone, or in combination with one or more dopants selected from the group consisting of aluminum, silicon and carbon.

The tungsten-containing structure 14 comprises a material 18. Such material may be of any suitable composition; and in some embodiments may comprise, consist essentially of, or consist of tungsten. The tungsten-containing structure may be over a semiconductor base (not shown). Such semiconductor base may comprise silicon, and the tungsten-containing structure may join to the silicon through a tungsten silicide interface (not shown).

If the tungsten-containing structure 14 is over a semiconductor base, the construction 10 may be considered to be comprised by a semiconductor substrate. The terms “semiconductive substrate,” “semiconductor construction” and “semiconductor substrate” mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials), and semiconductive material layers (either alone or in assemblies comprising other materials). The term “substrate” refers to any supporting structure, including, but not limited to, the semiconductor substrates described above.

The operational mode “A” has the electrically conductive structure 12 directly against the tungsten-containing structure 14. The structure 12 joins to the tungsten-containing structure 14 at an interface 20. Such interface is configured to rupture when current through the interface exceeds a predetermined level. The amount of current suitable to generate such rupture may depend on, among other things, the composition of tungsten-containing structure 14 along the interface, the composition of structure 12 along the interface, and the area of the interface. Thus, the fuse may be tailored for particular applications by adjusting one or more of the composition of structure 12, the composition of tungsten-containing structure 14, and the area of interface 20.

The amount of current suitable to generate the rupture may also depend on the voltage provided across interface 20, but such voltage may be relatively fixed by operational characteristics of an integrated circuit. Accordingly, the voltage may not be an operational parameter which can be readily modified for tailoring operational performance of the fuse.

The amount of current suitable to rupture the interface will be inversely related to the area of the interface. In some embodiments, it will be desired to have the fuse be readily broken with a current less of than or equal to about 3 milliamps. In such embodiments, the total area of the interface 20 may be less than or equal to about 1500 square nanometers (i.e., nm²), which can enable the fuse to be broken with a current of less than or equal to about 2.5×10⁻³ amps under a voltage of less than or equal to about 2 volts. Thus, in some embodiments the predetermined current which ruptures the interface may be less than or equal to about 3 milliamps, and may be, for example, about 2.5 milliamps.

In some embodiments, the electrically conductive structure 12 may comprise titanium nitride doped with one or more of silicon, aluminum and carbon. The amount of current suitable to rupture the interface may be related to the type of dopant and the amount of dopant. Thus, operational characteristics of fuse construction 10 may be tailored, to some extent, through the selection of dopant concentration and type provided within the titanium nitride.

The fuse construction 10 is transitioned from the operational mode “A” to the operational mode “B” by providing sufficient current through interface 20 to rupture such interface and thus form the void 22 shown in the operational mode “B.”

The fuse construction 10 is diagrammatically illustrated to be provided between circuitry 30 and circuitry 32. The operational mode “A” may be considered to comprise a closed circuit through fuse construction 10 so that the circuitry 30 is electrically connected to the circuitry 32 through the fuse construction, and the operational mode “B” may be considered to comprise an open circuit through the fuse construction so that the circuitry 30 is no longer connected to the circuitry 32.

In some embodiments, the rupture of the interface 20 of the fuse occurs through a mechanism utilizing electron wind. Specifically, current flow through the interface causes electro-migration wherein momentum of moving electrons causes atoms to move from their original positions, and ultimately causes formation of the void 22. The mechanism is provided herein to assist the reader in understanding the invention, and is not to limit the invention except to the extent, if any, that such mechanism is expressly recited in the claims that follow.

The transition from operational mode “A” to operational mode “B” is diagrammatically illustrated with an arrow 33. Another arrow 34 is shown in dashed-line to indicate that there may be a transition from operational mode “B” back to operational mode “A,” which may be utilized to reset the fuse in some embodiments. Specifically, if sufficient voltage is provided across the void 22 in operational mode “B,” and if such voltage is provided in an appropriate orientation so that current may be flowed across the void in an opposite direction (i.e., an opposite polarity) to the current flow that created the void, then it may be possible to recover the interface 20 of operational mode “A.” In the embodiment discussed above in which the total area of the interface 20 was less than or equal to about 1500 nm², the interface could be recovered with a voltage exceeding about 6 volts.

A difficulty in recovering the interfaces of fuse constructions of the type shown in FIG. 1 is that there may be a substantial variability between seemingly identical fuses relative to the amount of voltage required to accomplish such recovery. Another difficulty is that there may be substantial differences between the recovered fuses relative to the current flow across the reestablished interfaces. Regardless of the above-described difficulties, there may be embodiments in which it is advantageous to recover at least some of the fuses utilized in an integrated circuit.

The fuse construction 10 of FIG. 1 may have any suitable configuration. Example configurations are described with reference to FIGS. 3-8.

Referring to FIG. 3, an example configuration 10 a is shown in top view (FIG. 2) and cross-sectional side view (FIG. 3). The construction comprises an electrically conductive structure 12 a (which may be a titanium-containing structure) configured as a substantially cylindrical pedestal, and comprises a tungsten-containing structure 14 a which is also configured to be substantially cylindrical. The tungsten-containing structure 14 a has a substantially circular end 40, and the pedestal 12 a has an edge 41 which is directly against such end. In the shown embodiment, the edge 41 is a substantially circular end of the pedestal 12 a.

In the shown embodiment of FIGS. 2 and 3, the end 40 of the tungsten-containing structure 14 a is larger than the end 41 of the structure 12 a. In other words, the end 40 has a first total area (i.e., a first surface area), and the end 41 has a second total area (i.e., a second surface area); with the second total area being less than the first total area.

Referring to FIGS. 4 and 5, an example configuration 10 b is shown in top view (FIG. 4) and cross-sectional side view (FIG. 5). The construction comprises an electrically conductive structure 12 b (which may be a titanium-containing structure) configured as a substantially cylindrical annular structure, and comprises a substantially cylindrical tungsten-containing structure 14 b. The tungsten-containing structure 14 a has a substantially circular end 45, and the pedestal 12 b has an annular edge 47 which is directly against such end. In the shown embodiment, the edge 47 is a substantially circular end of the annular structure 12 b.

Referring to FIGS. 6-8, an example configuration 10 c is shown in top view (FIG. 6) and in a pair of cross-sectional side views (FIGS. 7 and 8). The construction comprises a substantially cylindrical tungsten-containing structure 14 c having a substantially circular end 49. The construction 10 c also comprises an electrically conductive structure 12 c (which may be a titanium-containing structure) configured to comprise a plate 50 oriented to have an edge 53 directly against the end 49 of the tungsten-containing structure 14 c; and to have a ledge 51 along the plate 50 and also along the end 49 of the tungsten-containing structure 14 c.

As discussed above, an advantage of the fuse constructions described herein may be that such fuse constructions can be readily incorporated into existing integrated circuit fabrication processes. FIG. 9 illustrates an example integrated circuit 70 which may be configured to utilize fuses of the types described above with reference to FIGS. 1-8. The circuit 70 comprises a memory array region 72 and a fuse region 74 (which may be referred to as a fuse bank). The memory array region may be configured to comprise any of numerous types of memory constructions, either now known or yet to be developed. In some embodiments, the memory array region may comprise PCRAM. Such memory may utilize titanium nitride-containing structures as heaters of individual memory cells, and may utilize tungsten-containing structures as electrical interconnects, in accordance with conventional processing.

The utilization of one or more constructions of the types described above with reference to FIGS. 1-8 may enable one or more components of such fuses to be formed simultaneously with one or more components of the memory. For instance, tungsten-containing structures of the fuses may be formed simultaneously with electrical interconnects of the memory and/or titanium-containing structures of the fuses may be formed simultaneously with heater structures of PCRAM cells. Such may advantageously enable fuses to be incorporated into existing integrated circuitry without addition of materials or masking steps beyond those already utilized in fabrication of the integrated circuitry. Although it may be advantageous for the fuses to be patterned utilizing a common mask as that utilized for forming a memory array in some embodiments, in other embodiments it may be preferred to utilize at least one dedicated mask during fabrication of the fuses (for instance, if it is desired to implant dopant into the fuses which is not utilized in the memory).

Although the embodiment of FIG. 9 refers to the integrated circuitry 72 as being memory, in other embodiments other types of integrated circuitry may be utilized in combination with one or more of the fuse types described above with reference to FIGS. 1-8.

The fuses discussed above may be incorporated into electronic systems. Such electronic systems may be used in, for example, memory modules, device drivers, power modules, communication modems, processor modules, and application-specific modules, and may include multilayer, multichip modules. The electronic systems may be any of a broad range of systems, such as, for example, clocks, televisions, cell phones, personal computers, automobiles, industrial control systems, aircraft, etc.

The particular orientation of the various embodiments in the drawings is for illustrative purposes only, and the embodiments may be rotated relative to the shown orientations in some applications. The description provided herein, and the claims that follow, pertain to any structures that have the described relationships between various features, regardless of whether the structures are in the particular orientation of the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only show features within the planes of the cross-sections, and do not show materials behind the planes of the cross-sections in order to simplify the drawings.

When a structure is referred to above as being “on” or “against” another structure, it can be directly on the other structure or intervening structures may also be present. In contrast, when a structure is referred to as being “directly on” or “directly against” another structure, there are no intervening structures present. When a structure is referred to as being “connected” or “coupled” to another structure, it can be directly connected or coupled to the other structure, or intervening structures may be present. In contrast, when a structure is referred to as being “directly connected” or “directly coupled” to another structure, there are no intervening structures present.

Some embodiments include a fuse comprising a tungsten-containing structure and an electrically conductive structure directly contacting the tungsten-containing structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through said interface exceeds a predetermined level.

Some embodiments include a fuse comprising a tungsten-containing structure having a first end with a first total area, and an electrically conductive structure having a second end with a second total area. The second total area is less than the first total area. An entirety of the second end directly contacts the first end. An interface between the first and second ends is configured to rupture when current through said interface exceeds a predetermined level. The electrically conductive structure may be a titanium-containing structure comprising a mixture containing titanium and nitrogen. The interface comprises an area of less than or equal to about 1500 nm².

Some embodiments include a method of forming and using a fuse. A fuse is formed to comprise a tungsten-containing structure directly contacting a titanium-containing structure. An interface between the tungsten-containing structure and the titanium-containing structure is configured to rupture when current through said interface exceeds a predetermined level. Current exceeding the predetermined level is passed through the interface to rupture the interface.

In compliance with the statute, the subject matter disclosed herein has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the claims are not limited to the specific features shown and described, since the means herein disclosed comprise example embodiments. The claims are thus to be afforded full scope as literally worded, and to be appropriately interpreted in accordance with the doctrine of equivalents. 

We claim:
 1. A method of using a fuse, comprising: providing the fuse to comprise a tungsten-containing structure directly contacting a titanium-containing structure; the tungsten containing structure having a circular uppermost surface with a total area and contacting the titanium-containing structure only at an interface between the uppermost surface of the tungsten-containing and the titanium-containing structure, the interface being circular and having a total area of less than or equal to 1500 nm², the interface having an area that is less than the total area of the uppermost surface, the interface being configured to rupture when current through said interface exceeds a predetermined level; passing current exceeding the predetermined level through the interface to rupture the interface; wherein the fuse is formed adjacent a PCRAM array; wherein at least one of the tungsten-containing structure and the titanium-containing structure is identical in composition with a structure of the PCRAM array; and wherein the titanium-containing structure comprises titanium nitride doped with one or more of aluminum, silicon and carbon.
 2. The method of claim 1 wherein at least one of the tungsten-containing structure and the titanium-containing structure is formed simultaneously with a structure of the PCRAM array.
 3. The method of claim 2 wherein the tungsten-containing structure is formed simultaneously with a tungsten-containing structure of the PCRAM array.
 4. The method of claim 2 wherein the titanium-containing structure is formed simultaneously with titanium-containing heater structures of PCRAM cells of the PCRAM array.
 5. The method of claim 1 further comprising, after rupturing the interface, resetting the fuse by flowing current across the ruptured interface.
 6. The method of claim 5 wherein the resetting comprises flowing current of an opposite polarity as compared to current utilized to rupture the interface.
 7. The method of claim 1 wherein the rupture utilizes electron wind.
 8. The method of claim 1 wherein the tungsten-containing structure consists of tungsten. 